Thomas Boggess Research

Refereed and Invited Articles:

“ Room-temperature electric-field controlled spin dynamics in a (110) InAs quantum well,” K. C. Hall, K. Gundogdu, J. L. Hicks, A. N. Kocbay, M. E. Flatte, T. F. Boggess, K. Holabird, A. Hunter, D. H. Chow, and J. J. Zinck,  to be published, Appl. Phys. Lett. 86 , 202114  (2005).

 “Electron and hole spin dynamics in semiconductor quantum dots,” K. C. Hall, K. Gundogdu, E. J. Koerperick, C. E. Pryor, M. E. Flatté, Thomas F. Boggess, O. B. Shchekin and D. G. Deppe, Appl. Phys. Lett. 86 , 113111 (2005).

“Resonant interband tunneling in (110) symmetric diodes,”J. J.  Zinck, D. H. Chow, K. Holabird and J. N. Schulman, K. C. Hall, and T. F. Boggess, Appl. Phys. Lett. 86, 073502 (2005).

“Ultrafast electron capture into p-modulation doped quantum dots,” K. Gundogdu, K. C. Hall, D. G. Deppe,  O. B. Shchekin, and Thomas F. Boggess, Appl. Phys. Lett. 85 , 4570 (2004)

INVITED: “Carrier and spin dynamics in charged quantum dots,” K.C. Hall, K. Gundogdu, T.F. Boggess, O.B. Shchekin, and D.P. Deppe, Proceedings of the SPIE, Quantum Dots, Nanoparticles, and Nanoclusters, Vol. 5361, pp. 76-87 (2004).

"Effects of rapid thermal annealing on the optical properties of low-loss 1.3 um GaInNAs/GaAs saturable Bragg reflectors," H.D. Sun, R. Macaluso, S. Calves, G.J. Valentine, D. Burns, M.D. Dawson, K. Gundogdu, K.C. Hall, T.F. Boggess, T. Jouhti, and M. Pessa, J. Applied Physics 96, (2004).

"GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 um device applications," S. Calvez, J.-M. Hopkins, S.A. Smith, A.H. Clark, R. Macaluso, H.D. Sun, M.D. Dawson, T. Jouhti, M. Pessa, K. Gundogdu, K.C. Hall, T.F. Boggess, J Crystal Growth 268, 457-465 (2004).

“Efficient electron spin detection with positively charged quantum dots,” K. Gundogdu , K. C. Hall , Thomas F. Boggess , O. B. Shchekin , D. G. Deppe , Appl. Phys. Lett.84 (2003)

“Nonmagnetic semiconductor spin transistor,” K. C. Hall, Wayne H. Lau, K. Gundogdu, Michael E. Flatte´ and Thomas F. Boggess, Appl. Phys. Lett. 83, 2937 (2003)selected for inclusion in Virtual Journal of Nanoscale Science & Technology 8, October 13 (2003), www.vjnano.org .

“Spin relaxation in (110) and (001) InAs/GaSb superlattices,” K.C. Hall, K. Gundogdu, E. Altunkaya, W.H. Lau, M.E. Flatté, T.F. Boggess, J.J. Zinck, W.B. Barvosa-Carter, and S.L. Skeith, Phy. Rev. B 68, 115311(2003); selected for inclusion in Virtual Journal of Nanoscale Science & Technology 8, September 29 (2003), www.vjnano.org   and Virtual Journal of Ultrafast Science 2, October (2003), http://www.vjultrafast.org . 

INVITED “Time-resolved measurements of carrier dynamics in 6.1-angstrom heterostructures,” Thomas F. Boggess, K.C. Hall, K. Gundogdu, E. Altunkaya, C. Yu, J.T. Olesberg, J.J. Zinck, W.B. Barvosa-Carter, S.L. Skeith, Proceedings of the Electrochemical Society, Volume 2002-14, 50 (2002).

“Auger recombination in narrow gap semiconductor superlattices incorporating antimony,” C.H. Grein, M.E. Flatté, J.T. Olesberg, S.A. Anson, L. Zhang, and T.F. Boggess, J. Appl. Phys. 92, 7311 (2002).

“Carrier dynamics, laser characteristics, and microcavity effects based on InAs and InGaAs quantum dot light emitters,” D.G. Deppe, O. Shchekin, G. Park, T.F. Boggess, L. Zhang, J. Korean Phys. Soc. 39, S398-S401, Suppl. S DEC 2001.

“Interface contributions to spin relaxation in a short-period InAs/GaSb superlattice,” J. T. Olesberg, W. Lau, Michael E. Flatté, C. Yu, E. Altunkaya, E. M. Shaw, T. C. Hasenberg, and Thomas F. Boggess, Phys. Rev. B Rapid Communications 64, 201301(R) (2001).

“Excited-state dynamics and reandom capture in InGaAs/GaAs quantum dots,” L. Zhang, Thomas F. Boggess, K. Gundogdu, Michael E. Flatté, D.G. Deppe, D.L. Huffaker, O.B. Shchekin, and C. Cao, Appl. Phys. Lett. 79, 3320 (2001).


“Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots,” Thomas F. Boggess, L. Zhang, D. G. Deppe, D. L. Huffaker, and C. Cao,  Appl. Phys. Lett. 78 , 276 (2001)

" Room-Temperature Electron Spin Relaxation in Bulk InAs ," Thomas F. Boggess, J. T. Olesberg, C. Yu, Michael E. Flatt é, and Wayne H. Lau, Appl. Phys. Lett. 77 , 1333 (2000).

  " Comparison of linewidth enhancement factors in mid-infrared active region materials, " J.T. Olesberg, Michael E. Flatté, and Thomas F. Boggess, J. Appl. Phys. 87 , 7164 (2000).

"Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes," T.C. Hasenberg, P. S. Day, E. M. Shaw, J. T. Olesberg, C. Yu, Thomas F. Boggess, and M. E. Flatté, J. Vac. Sci. Technol. B18 , 1623 (2000).

" Dynamic response of 1.3 m m wavelength InGaAs/GaAs quantum dots ," L. Zhang, Thomas F. Boggess, D. G. Deppe, D. L. Huffaker, O. B. Shchekin, and C. Cao, Appl. Phys. Lett., 76 , 1222 (2000).

" Differential gain, differential index, and linewidth enhancement factor for a 4-micron superlattice laser active layer ," S. A. Anson, J. T. Olesberg, Michael E. Flatté, T. C. Hasenberg, and Thomas F. Boggess, J. Appl. Phys. 86 , 713 (1999).

" Carrier recombination rates in narrow-gap semiconductor superlattices ," Michael E. Flatté, C. H. Grein, T. C. Hasenberg, S. A. Anson, D. -J. Jang, J. T. Olesberg, and Thomas F. Boggess, Phys. Rev. B 59 , 5745 (1999).

" Optimization of active regions in mid-infrared lasers ", J. T. Olesberg, M. E. Flatté, B. J. Brown, C. H. Grein, T. C. Hasenberg, S. A. Anson, and T. F. Boggess, Appl. Phys. Lett. 74 , 188 (1999).

" Temperature dependence of Auger recombination in a multilayer, narrow-band-gap superlattice ," D.-J. Jang, Michael E. Flatté, C. H. Grein, J. T. Olesberg, T. C. Hasenberg, and Thomas F. Boggess, Phys. Rev. B 58 , 14047 (1998).

"Auger recombination in antimony-based, strain-balanced, narrow-band-gap superlattices," J. T. Olesberg, Thomas F. Boggess, S. A. Anson, D.-J. Jang, M. E. Flatté, T. C. Hasenberg, and C. H. Grein, in Infrared Applications of Semiconductors II , D. L. McDaniel, Jr., M. O. Manasreh, R. H. Miles, and S. Sivananthan, Eds. (Materials Research Society, Warrendale, PA, 1998) pp. 83 - 88.

" Experimental and theoretical density-dependent absorption spectra in (GaInSb/InAs)/AlGaSb superlattice multiple quantum wells, " J. T. Olesberg, S. A. Anson, S. W. McCahon, M. E. Flatté, Thomas F. Boggess, D. H. Chow, and T. C. Hasenberg, Appl. Phys. Lett., 72 , 229, (1998).

" III-V Interband 5.2 micron laser operating at 185K ," M. E. Flatté, T. C. Hasenberg, J. T. Olesberg, S. A. Anson, Thomas F. Boggess, Chi Yan, D. L. McDaniel, Jr., Appl. Phys. Lett., 71 , 3764, (1997).

" Theoretical performance of mid-infrared broken-gap multilayer superlattice lasers ," Michael E. Flatté, J. T. Olesberg, S. A. Anson, Thomas F. Boggess, T. C. Hasenberg, R. H. Miles, and C. H. Grein, Appl. Phys. Lett. 70 , 3212 (1997).

" Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion ," D.-J. Jang, J. T. Olesberg, M. E. Flatté, Thomas F. Boggess, and T. C. Hasenberg, Appl. Phys. Lett., 70 , 1125 (1997).

"Theoretical performance of mid-IR broken-gap superlattice quantum well lasers," Michael E. Flatté, C. H. Grein, J. T. Olesberg, and T. F. Boggess, in Infrared Applications of Semiconductors - Materials, Processing, and Devices , M. O. Manasreh, T. H. Meyers, and F. H. Julian, Eds. (Materials Research Society, Pittsburgh, 1997) p. 85.

" Carrier recombination dynamics in a (GaInSb/InAs)/AlGaSb superlattice multiple quantum well, " S. W. McCahon, S. A. Anson, D.-J. Jang, M. E. Flatté, Thomas F. Boggess, D. H. Chow, T. C. Hasenberg, and C. H. Grein, Appl. Phys. Lett., 68 , 2135 (1996).

"Generation of 3-4 um femtosecond pulses from a synchronously-pumped, critically-phase-matched KTiOPO4 optical parametric oscillator," S. W. McCahon, S. A. Anson, D.-J. Jang, Thomas F. Boggess, Opt. Lett., 20 , 2309 (1995).

"Picosecond measurements of absorptive and refractive optical nonlinearities in GaP at 532 nm," Steve Rychnovsky, G. R. Allan, C. H. Venzke, and Thomas F. Boggess, Opt. Lett. 19 , 527 (1994).

"Picosecond investigations of the excited-state transition at 532 nm in King's complex [(C5H5)Fe(CO)]4 and synthesized analogs," G. R. Allan, S. J. Rychnovsky, C. H. Venzke, Thomas F. Boggess, and Lee Tutt, J. Chem. Phys., 98 , 216 (1994).

INVITED: "A review of optical limiting mechanisms and devices using organics, fullerines, semiconductors and other materials," L. W. Tutt and Thomas F. Boggess, Progress in Quantum Electronics, 17 , 299 (1993).

"Ambipolar diffusion and carrier lifetime measurements in all-binary (InAs)2(GaAs)5 strained quantum wells grown on GaAs," X. R. Huang, D. S. McCallum, Martin D. Dawson, Arthur L. Smirl, Thomas F. Boggess, T. C. Hasenberg, and R. L. Tober, J. Appl. Phys., 74 , 1868 (1993).

"Magnitude, origin, and evolution of piezo-electric optical nonlinearities in strained [111]B InGaAs/GaAs quantum wells," A. N. Cartwright, D. S. McCallum, Thomas F. Boggess, Arthur L. Smirl, T. S. Moise, L. J. Guido, R. C. Barker, and B. S. Wherrett, J. Appl. Phys., 73 , 7767 (1993).

"Enhanced ambipolar in-plane transport in an InAs/GaAs Hetero n-i-p[[opthyphen]]i," D. S. McCallum, A. N. Cartwright, X. R. Huang, Thomas F. Boggess, Arthur L. Smirl, T. C. Hasenberg, J. Appl. Phys., 73 , 3860 (1993).

"Picosecond investigations of optical limiting mechanisms in King's complex," Thomas F. Boggess, G. R. Allan, S. J. Rychnovsky, D. R. Labergerie, C. H. Venzke, Arthur L. Smirl, L. W. Tutt, Alan Kost, S. W. McCahon, M. B. Klein, Opt. Eng., 32 , 1063 (1993).

"Picosecond reverse saturable absorption in King's complex [(C5H5)Fe(CO)]4," G. R. Allan, D. R. Labergerie, S. J. Rychnovsky, Thomas F. Boggess, Arthur L. Smirl, and Lee Tutt, J. Chem. Phys., 96 , 6313-6317 (1992).

"Picosecond optical nonlinearities in a strained InAs/GaAs hetero-nipi structure," D. S. McCallum, X. R. Huang, Martin D. Dawson, Thomas F. Boggess, Arthur L. Smirl, T. C. Hasenberg, and Alan Kost, J. Appl. Phys., 71 , 929 (1992).

"Optical nonlinearities and ultrafast charge transport in all-binary InAs/GaAs strained hetero n-i-p-i's," D. S. McCallum, X. R. Huang, Martin D. Dawson, Thomas F. Boggess, Arthur L. Smirl, T. C. Hasenberg, and Alan Kost, J. Appl. Phys., 70 , 6891 (1991).

"Photorefractive nonlinearities caused by the Dember space-charge field in undoped CdTe," W. Andreas Schroeder, Thomas S. Stark, Thomas F. Boggess, Arthur L. Smirl, and George C. Valley, Opt. Lett., 16 , 799 (1991).

"Room temperature optical nonlinearities in strained (InAs)2(GaAs)5 superlattice quantum wells," D. S. McCallum, X. R. Huang, Thomas F. Boggess, Martin D. Dawson, Arthur L. Smirl, and T. C. Hasenberg, J. Appl. Phys., 69 , 3243 (1991).

"Optical studies of InAs/GaAs on GaAs short-period strained-layer superlattices grown by MBE and MEE," T. C. Hasenberg, D. S. McCallum, X. R. Huang, A. L. Smirl, M. D. Dawson, and T. F. Boggess, J. Crystal Growth, 111 , 388 (1991).

"Linear optical properties of quantum wells composed of all-binary InAs/GaAs short-period strained-layer superlattices," T. C. Hasenberg, D. S. McCallum, X. R. Huang, Martin D. Dawson, Thomas F. Boggess, and Arthur L. Smirl, Appl. Phys. Lett., 58 , 937 (1991).

"Single-beam and multiple-beam optical limiters using semiconductors," Thomas F. Boggess, Arthur L. Smirl, J. Dubard, A. G. Cui, and Steven R. Skinner, Opt. Eng., 30 , 629 (1991).

"Picosecond separation and measurement of co-existing photorefractive, bound-electronic and free-carrier grating dynamics in gallium arsenide," W. Andreas Schroeder, Thomas S. Stark, Martin D. Dawson, Thomas F. Boggess, Arthur L. Smirl, and G. C. Valley, Opt. Lett., 16 , 159 (1991).

"Picosecond room temperature excitonic-absorption saturation and four-wave mixing in InAs/GaAs short-period strained-layer superlattices," D. S. McCallum, X. R. Huang, Martin D. Dawson, Thomas F. Boggess, Arthur L. Smirl, and T. C. Hasenberg, Superlattices and Microstructures, 8 , 127 (1990).

"Two-photon absorption and anisotropic transient energy transfer in BaTiO3 with 1-ps excitation," Thomas F. Boggess, Jeffrey O. White, and George C. Valley, J. Opt. Soc. Am. B, 7 , 2255 (1990).

INVITED: "Beam amplification by transient energy transfer in GaAs and Si," J. Dubard, Arthur L. Smirl, A. G. Cui, George C. Valley, Thomas F. Boggess, Proceedings of the International Conference on Optical Nonlinearity and Bistability of Semiconductors, 22-25 August 1988, Berlin, GDR, Phys. Stat. Sol. (B), 150 , 913 (1989).

"Formation, decay and erasure of photorefractive gratings written in BaTiO3 by picosecond pulses," Arthur L. Smirl, K. Bohnert, George C. Valley, Ruth Ann Mullen, Thomas F. Boggess, J. Opt. Soc. Am. B, 6 , 606 (1989).

"Polarization rotation switch using picosecond pulses in GaAs," Arthur L. Smirl, J. Dubard, A. G. Cui, Thomas F. Boggess, George C. Valley, Opt. Lett, 14 , 242 (1989).

"Optical cross section ratio for EL2/EL2 + in GaAs," George C. Valley, Thomas F. Boggess, J. Dubard, Arthur L. Smirl, J. Appl. Phys., 66 , 2407 (1989).

"Stimulated emission in indirect-gap A1xGa1-xAs," H. Kalt, Arthur L. Smirl, Thomas F. Boggess, J. Appl. Phys., 65 , 294 (1989).

INVITED: "Beam amplification by transient energy transfer in GaAs and Si," J. Dubard, Arthur L. Smirl, A. G. Cui, George C. Valley, Thomas F. Boggess, Proceedings of the International Congress on Optical Science and Engineering, 19-23 September 1988, Hamburg, FRG.

INVITED: "Resonantly-enhanced and alloy-assisted photoluminescence, band-gap narrowing and stimulated emission in A1xGa1-xAs," H. Kalt, Arthur L. Smirl, K. Bohnert, T. F. Boggess, SPIE Vol. 942 , 195 (1988).

INVITED: "Picosecond photorefractive and free-carrier transient energy transfer in GaAs at 1 um," Arthur L. Smirl, George C. Valley, Klaus M. Bohnert, Thomas F. Boggess, IEEE J. Quantum Electron., QE-24 , 289 (1988).

"Piezoreflectance as a supplement to photoreflectance for nondestructive characterization of GaAs/A1xGa1-xAs multiple quantum wells," R. L. Tober, Arthur L. Smirl, Thomas F. Boggess, J. Appl. Phys., 64 , 4678 (1988).

"High accuracy, high efficiency phase conjugation at 1.06 um by four[[opthyphen]]wave mixing in photorefractive GaAs," M. B. Klein, S. W. McCahon, Thomas F. Boggess, George C. Valley, J. Opt. Soc. Am. B, 5 , 2467 (1988).

"Cavity length detuning effects and stabilization of a synchronously pumped femtosecond linear dye laser," Martin D. Dawson, Dwight Maxson, Thomas F. Boggess, and Arthur L. Smirl, Opt. Lett., 13 , 126 (1988).

"Renormalization of the direct and indirect band gaps in highly excited A1xGa1-xAs," K. Bohnert, H. Kalt, Thomas F. Boggess, D. P. Norwood, Arthur L. Smirl, I. J. D'Haenens, Phys. Rev. Lett., 60 , 37 (1988).

INVITED: "Picosecond investigations of high-density carrier dynamics in alloy semiconductors," Thomas F. Boggess, H. Kalt, K. Bohnert, D. P. Norwood, Arthur L. Smirl, SPIE Vol. 793 -Ultrafast Lasers Probe Phenomena in Bulk and Microstructure Semiconductors, 37 (1987).

"Picosecond and femtosecond pulse generation near 1000 nm from a frequency-doubled Nd:YAG pumped cw dye laser," Martin D. Dawson, Thomas F. Boggess, Arthur L. Smirl, Opt. Lett., 12 , 590 (1987).

"Nonlinear optical properties of the electron-hole plasma in A1xGa1-xAs," H. Kalt, K. Bohnert, D. P. Norwood, Thomas F. Boggess, Arthur L. Smirl, I. J. D'Haenens, J. Appl. Phys., 62 , 4187 (1987).

"Nonlinear refraction in silicon induced by one-micron picosecond pulses," Thomas F. Boggess, K. Bohnert, D. P .Norwood, C. D. Mire, Arthur L. Smirl, Opt. Commun., 64 , 387 (1987).

"Picosecond photorefractive effect in BaTiO3," Arthur L. Smirl, George C. Valley, Ruth Ann Mullen, K. Bohnert, C. D. Mire, Thomas F. Boggess, Opt. Lett., 12 , 501 (1987).

"Femtosecond synchronously-pumped pryidine dye lasers," Martin D. Dawson, Thomas F. Boggess, Arthur L. Smirl, Opt. Lett., 12 , 254 (1987).

"Femtosecond pulse generation in the red/deep red spectral region," Martin D. Dawson, Thomas F. Boggess, Dennis W. Garvey, Arthur L. Smirl, IEEE J. Quantum Electron. Lett., QE-23 , 290 (1987).

INVITED: "Fundamentals and applications of the interaction of picosecond one micron radiation with crystalline silicon," Ian W. Boyd, Thomas F. Boggess, Arthur L. Smirl, Steven C. Moss, in Trends in Quantum Electronics, A. M. Prokhorov and I. Ursu, Eds. (Springer-Verlag, New York, 1986) pp. 281-300.

"Picosecond photorefractive beam coupling in GaAs," George C. Valley , Arthur L. Smirl, M. B. Klein, K. Bohnert, Thomas F. Boggess, Opt. Lett., 11 , 647 (1986).

Variable intracavity spectral windowing in a synchronously pumped hybridly modelocked cw dye laser," Martin D. Dawson, Thomas F. Boggess, Dennis W. Garvey, Arthur L. Smirl, Opt. Lett., 11 , 721 (1986).

"A hybridly modelocked cw dye laser with Brewster prisms," Martin D. Dawson, Thomas F. Boggess, Dennis W. Garvey, Arthur L. Smirl, Opt. Commun., 60 , 79 (1986).

"Tunable near infrared picosecond pulses from a short cavity dye laser," K. Bohnert, Thomas F. Boggess, Kamjou Mansour, Dwight Maxson, Arthur L. Smirl, IEEE J. Quantum Electron., QE-22 , 2195 (1986).

"Structural changes produced in silicon by intense one micron picosecond pulses," Arthur L. Smirl, Ian W. Boyd, Thomas F. Boggess, Steven C. Moss, Henry M. van Driel, J. Appl. Phys., 60 , 1169 (1986).

"Simultaneous measurement of the two-photon coefficient and free carrier cross section above the bandgap of crystalline silicon," Thomas F. Boggess, K. Bohnert, Kamjou Mansour, Steven C. Moss, Ian W. Boyd, Arthur L. Smirl, IEEE J. Quantum Electron., QE-22 , 360 (1986).

"Cross sectional TEM characterization of structural changes produced in silicon by one micron picosecond pulses," Arthur L. Smirl, Ian W. Boyd, Thomas F. Boggess, Steven C. Moss, R. F. Pinizzotto, in Beam-Solid Interactions and Phase Transformations, H. Kurz, G. L. Olsen, and J. M. Poate, Eds. (Materials Research Society, Pittsburgh, 1986) pp. 213-218.

"Application of the nonlinear-optical properties and melt dynamics of crystalline silicon to optical limiting of one micron picosecond radiation," Arthur L. Smirl, Thomas F. Boggess, Ian W. Boyd, Steven C. Moss, K. Bohnert, Kamjou Mansour, Opt. Eng., 25 , 157 (1986).

INVITED: "Spatial and temporal resolution of the nonlinear optical properties and melt dynamics of Si at 1 um," Arthur L. Smirl, Thomas F. Boggess, Ian W. Boyd, Steven C. Moss, K. Bohnert, K. Mansour, SPIE, 533 , 87 (1985).

INVITED: "Two-photon absorption, nonlinear refraction, and optical limiting in semiconductors," Eric W. Van Stryland, H. Vanherzeele, M. A. Woodall, M. J. Soileau, Arthur L. Smirl, Shekhar Guha, Thomas F. Boggess, Opt. Eng., 24 , 613 (1985).

INVITED: "Pulsewidth dependence of nonlinear energy deposition and redistribution in Si, GaAs, and Ge during 1 um picosecond irradiation," Arthur L. Smirl, Thomas F. Boggess, Steven C. Moss, Ian W. Boyd, J. Lumin., 30 , 272 (1985).

"Spatially and temporally resolved reflectivity profiles of crystalline silicon irradiated by 48 ps pulses of one micron laser radiation," Steven C. Moss, Ian W. Boyd, Thomas F. Boggess, Arthur L. Smirl, in Energy Beam-Solid Interactions and Transient Thermal Processing 1984 (Materials Research Society, Pittsburgh, 1985) pp. 107-112.

"Temporally resolved imaging of silicon surfaces melted with intense picosecond one micron laser pulses," Ian W. Boyd, Steven C. Moss, Thomas F. Boggess, Arthur L. Smirl, Appl. Phys. Lett. 46 , 366 (1985).

"Optical limiting in GaAs," Thomas F. Boggess, Arthur L. Smirl, Steven C. Moss, Ian W. Boyd, E. W. Van Stryland, IEEE J. Quantum Electron., QE-21 , 488 (1985).

"Nonlinear optical energy regulation by nonlinear refraction and absorption in silicon," Thomas F. Boggess, Steven C. Moss, Ian W. Boyd, Arthur L. Smirl, Opt. Lett., 9 , 291 (1984).

"Various phase transitions and changes in surface morphology of crystalline silicon induced by 4-260 picosecond pulses of 1 micron radiation," Ian W. Boyd, Steven C. Moss, Thomas F. Boggess, Arthur L. Smirl, Appl. Phys. Lett., 45 , 80 (1984).

INVITED: "Picosecond damage studies at 0.5 and 1 um," M. J. Soileau, William E. Williams, E. W. Van Stryland, Thomas F. Boggess, Arthur L. Smirl, Opt. Eng. 22 , 424 (1983).

INVITED: "Picosecond interband saturation and intraband relaxation in germanium," Arthur L. Smirl, B. S. Wherrett, Thomas F. Boggess, Proceedings of the International Workshop on "Phase Conjugation, Instabilities, and Critical Behavior in Nonlinear Interaction of Optical Beams," J. Phys. (Paris), 44 , C2-71 (1983).

"Picosecond transient orientational and concentration gratings in germanium," Arthur L. Smirl, Thomas F. Boggess, B. S. Wherrett, Alan Miller, G. Paul Perryman, IEEE J. Quantum Electron. QE-19 , 690 (1983).

"Theory of degenerate four-wave mixing in picosecond excitation-probe experiments," B.S. Wherrett, Arthur L. Smirl, Thomas F. Boggess, IEEE J. Quantum Electron. QE-19 , 680 (1983).

"Picosecond transient grating measurement of orientational effects in semiconductors," Thomas F. Boggess, Arthur L. Smirl, B. S. Wherrett, Opt. Commun. 43 , 128 (1982).

"Picosecond optically induced anisotropic state filling in semiconductors," Arthur L. Smirl, Thomas F. Boggess, B. S. Wherrett, G. Paul Perryman, Alan Miller, Phys. Rev. Lett., 49 , 933 (1982).

"Generation of a forward traveling phase conjugate wave in germanium," Arthur L. Smirl, Thomas F. Boggess, F. A. Hopf, Opt. Commun, 34 , 463 (1980).